Selective plasma etching during formation of integrated circuitry
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United States of America Patent
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Aug 18, 1987
Grant Date -
N/A
app pub date -
Feb 21, 1986
filing date -
Feb 21, 1986
priority date (Note) -
Expired
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Abstract
A method is disclosed for removing (etching) an insulating layer form an electrically semiconductive material wherein a volatile fluoride is substituted for a hydrocarbon in gases for selective plasma discharges. The removing is done without polymer build-up and loss of selectivity.
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