Process for manufacturing semiconductor devices containing microbridges
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United States of America Patent
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Sep 15, 1987
Grant Date -
N/A
app pub date -
Apr 29, 1986
filing date -
Apr 29, 1986
priority date (Note) -
Expired
status (Latency Note)
Importance
Abstract
A process for manufacturing semiconductor devices, comprising steps for obtaining a multilayered structure consisting of semiconductors and insulating films, by forming a microbridge which consists of a semiconductor in the form of a connecting bar or a one-side supported bar, and by forming an insulating film by oxidizing the exposed surface of the microbridge. The semiconductor device manufactured by the process of the invention exhibits good interface properties between the insulating film and the semiconductor layer. The invention makes it possible to easily manufacture a variety of MOSFETs with the SOI structure, which exhibit excellent characteristics.
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