GAAS semiconductor device
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United States of America Patent
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-
Sep 22, 1987
Issued Date -
N/A
app pub date -
Jul 7, 1986
filing date -
May 31, 1983
priority date (Note) -
Expired
status (Latency Note)
Importance
Abstract
A GaAs semiconductor device, includes a p-type GaAs substrate, an n-type region formed in the surface area of the substrate, an ohmic contact electrode formed in ohmic contact with the n.sup.+ -type region and having a layer of alloy of gold, and an interconnection electrode formed on the ohmic contact electrode and including an upper layer of aluminum and a lower layer of a metal which prevents gold from passing through it. The interconnection electrode is formed such that it covers the top and side surfaces of the ohmic contact electrode.
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