Additive process for manufacturing a mask for use in X-ray photolithography and the resulting mask
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United States of America Patent
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Sep 29, 1987
Grant Date -
N/A
app pub date -
Aug 2, 1985
filing date -
Aug 2, 1985
priority date (Note) -
Expired
status (Latency Note)
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Abstract
An additive process for manufacturing a mask (113) used in x-ray photolithography includes the step of coating a boron nitride layer (102) with a layer of indium tin oxide (104) and a second layer of boron nitride (106). The second boron nitride layer is patterend and used as a stencil during a plating process while the indium tin oxide layer is used as a plating base. Because boron nitride and thin indium tin oxide are both x-ray transparent, neither the stencil nor the plating base need be removed during the manufacturing process.
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