Importance

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Abstract

A wafer probe is provided having metallic transmission lines mounted on a tapered alumina substrate generally surrounded by microwave absorbing material. The probe provides for on-wafer measurements of small planar devices at frequencies from DC to at least 18 GHz with low inductance, and with constant characteristic impedance from the probe external cable terminal to the point of contact on device being probed. The microwave absorbing material absorbs energy propagating along the probe ground preventing this energy from resonating, radiating and re-exciting normal transmission line modes with minimal transmission line mode resonance along the probe ground. The probe, which may be coupled to receive signals from a coaxial cable, is capable of making contact with bonding pads of a device having a center-to-center distance between pads of only 4 mils.

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First Claim