Method of manufacturing a semiconductor device using amorphous silicon as a mask
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United States of America Patent
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Oct 6, 1987
Grant Date -
N/A
app pub date -
Feb 19, 1986
filing date -
Feb 20, 1985
priority date (Note) -
Expired
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Abstract
A method of manufacturing a semiconductor device has the steps of forming an insulating film on a semiconductor substrate, forming a polycrystalline silicon layer on the insulating film, converting either all of the polycrystalline silicon layer or a portion of predetermined thickness of the polycrystalline silicon layer into an amorphous silicon layer, patterning the polycrystalline silicon layer, either all of which or a portion of predetermined thickness of which has been converted into an amorphous silicon layer, and ion-implanting an impurity in the semiconductor substrate using the patterned layer as a mask.
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