Apparatus for chemical vapor deposition
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United States of America Patent
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Oct 13, 1987
Issued Date -
N/A
app pub date -
May 16, 1986
filing date -
Feb 25, 1983
priority date (Note) -
Expired
status (Latency Note)
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Abstract
An apparatus for the chemical vapor deposition on substrates of coatings comprising compounds of a titanium sub-group of metals, the vanadium sub-group of metals and the chromium sub-group of metals at temperatures in the range of 250.degree. to 850.degree. C. is disclosed. Sub-halides, such as TiCl.sub.3, are reacted with N.sub.2 and H.sub.2 and thermodynamic and kinetic parameters are manipulated by flow rates and partial pressures of the reactants to achieve the deposition reaction in the temperature range of 250.degree. to 850.degree. C.
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