Method of making multilayer capacitor memory device
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United States of America Patent
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Oct 20, 1987
Grant Date -
N/A
app pub date -
Jan 27, 1986
filing date -
Mar 29, 1985
priority date (Note) -
Expired
status (Latency Note)
Importance
Abstract
A semiconductor device comprising a capacitor of a laminated structure and a method of manufacturing thereof, in which first conductive layer and second conductive layer of different materials or different compositions are stacked alternately with dielectric films interposed therebetween and the first conductive layers and the second conductive layers are interconnected respectively at a time by suitably combining a selective etching method and an anisotropic etching method.
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