Method of selectively making contact structures both with barrier metal and without barrier metal in a single process flow
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United States of America Patent
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Oct 20, 1987
Issued Date -
N/A
app pub date -
Feb 25, 1986
filing date -
Jan 27, 1984
priority date (Note) -
Expired
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Abstract
A semiconductor structure with ohmic contacts and variable resistance contacts has an interconnection pattern to the contacts including a first barrier metal in contact with the variable resistance contacts and a second metal contacting the barrier metal and the ohmic contacts. The barrier layer protects the amorphotized crystalline structure of the variable resistance contacts. Fabrication processes are described.
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