Lithographic image size reduction
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United States of America Patent
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Nov 17, 1987
Grant Date -
N/A
app pub date -
Oct 28, 1986
filing date -
Oct 28, 1986
priority date (Note) -
Expired
status (Latency Note)
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Abstract
Disclosed is a process for reducing lithographic image size for integrated circuit manufacture. A mask of photosensitive material having an opening of a minimum size dictated by the limits of lithography is formed on a substrate. Reduction in the image size is achieved by establishing sidewalls to the interior vertical surfaces of the opening by depositing a conformal layer, followed by anisotropic etching. The dimension of the opening is reduced by the combined thickness of the two opposite insulator sidewalls. In a specific direct application of the disclosed process, a photomask/stencil having a pattern of openings of a minimum size smaller than possible by lithography, per se, is formed.
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