Non-selective implantation process for forming contact regions in integrated circuits
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United States of America Patent
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-
Dec 1, 1987
Grant Date -
N/A
app pub date -
Mar 13, 1986
filing date -
Mar 13, 1986
priority date (Note) -
Expired
status (Latency Note)
Importance
Abstract
An integrated circuit fabrication technique for a maskless method of forming contact regions in integrated circuits is disclosed. By carefully controlling implant dosages, ions of one conductivity type can be introduced into substrate regions having the same conductivity type to form enhanced characteristic contact regions without affecting the operational characteristics of substrate regions having the opposite conductivity type. The resulting cross-sectional profile of the regions of the one conductivity type allows fabrication overlap tolerances to be reduced and improves the contact regions' imperviousness to the spiking phenomenon.
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