Temperature compensation for a semiconductor light source used for exposure of light sensitive material
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United States of America Patent
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Dec 1, 1987
Grant Date -
N/A
app pub date -
Aug 27, 1985
filing date -
Aug 28, 1984
priority date (Note) -
Expired
status (Latency Note)
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Abstract
An image forming method for exposing a light-sensitive material with a semiconductor light source whereby temperature-dependent variations in the radiation intensity and spectral characteristics of the light source are fully compensated for so as to maintain constant exposure conditions. For this purpose, correction coefficients for ambient temperature dependent variations in the radiation intensity and spectral characteristics of the semiconductor light source are stored in a memory as tabulated data. In response to the measured ambient temperature, a correction coefficient is read from the memory and applied to compensate for any variations in the radiation intensity and spectral characteristics of the semiconductor light source. Also, the correction can be effected in accordance with the measured temperature of the light source, that measurement being performed by detecting a change in the forward bias supplied to the semiconductor light source.
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