Ion source
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
-
Dec 15, 1987
Issued Date -
N/A
app pub date -
Sep 26, 1986
filing date -
Sep 30, 1985
priority date (Note) -
Expired
status (Latency Note)
Importance
Abstract
An ion source for producing an ion beam utilized for fabrication and processing of semiconductors, thin films or the like includes a plasma producing chamber equipped with first magnetic means for limiting a plasma region and a plasma expansion chamber provided in combination with the plasma producing chamber on the side where a beam extracting electrode is disposed. The plasma expansion chamber is provided with second magnet array for confining and holding a plasma region therein which is of a larger area than that of the plasma region formed in the plasma producing chamber.
First Claim
Family
International Classification(s)
Cited Art Landscape
Patent Citation Ranking
Advertisement
Advertisement
Advertisement
Recipient Email Address
Recipient Email Address
Comment
Recipient Email Address
Add to Portfolio(s)
To add this patent to one, or more, of your portfolios, simply click the add button.
This Patent is in these Portfolios:
Add to additional portfolios:
Last Refreshed On:
Changes done successfully