Semiconductor memory device with variable self-refresh cycle
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United States of America Patent
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Dec 29, 1987
Grant Date -
N/A
app pub date -
Sep 13, 1984
filing date -
Sep 14, 1983
priority date (Note) -
Expired
status (Latency Note)
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Abstract
A semiconductor memory device with an internal refresh circuit is disclosed. The internal refresh circuit includes a timer circuit which generates a refresh request signal in a shorter cycle at a high temperature and in a longer cycle at a low temperature. The cycle of a self-refresh mode can be thereby lengthened in a low temperature to reduce a power consumption in the self-refresh mode.
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