Process for forming deposited film

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United States of America Patent

PATENT NO 4717586
SERIAL NO

06829072

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Abstract

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A process for forming a deposited film comprises introducing into a film forming space for forming a deposited film on a substrate an activated species (A) formed by decomposition of a compound containing silicon and a halogen and an activated species (B) formed from a germanium containing compound for film formation which is chemically mutually reactive with said activated species (A) separately from each other, and then permitting the both species to react chemically with each other thereby to form a deposited film on the above substrate.

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Patent Owner(s)

Patent OwnerAddress
CANON KABUSHIKI KAISHA A CORP OF JAPAN30-2 3-CHOME SHIMOMARUKO OHTA-KU TOKYO

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Ishihara, Shunichi Ebina, JP 75 1432
Kanai, Masahiro Tokyo, JP 212 4670
Oda, Shunri Tokyo, JP 23 500
Ohno, Shigeru Yokohama, JP 133 5567
Shimizu, Isamu Yokohama, JP 92 2031

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