Superlattice doped layers for amorphous silicon photovoltaic cells
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United States of America Patent
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Jan 12, 1988
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N/A
app pub date -
Apr 17, 1986
filing date -
Apr 17, 1986
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Expired
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Abstract
Superlattice doped layers for amorphous silicon photovoltaic cells comprise a plurality of first and second lattices of amorphous silicon alternatingly formed on one another. Each of the first lattices has a first optical bandgap and each of the second lattices has a second optical bandgap different from the first optical bandgap. A method of fabricating the superlattice doped layers also is disclosed.
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