Memory system employing a low DC power gate array for error correction

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United States of America Patent

PATENT NO 4719627
SERIAL NO

06835777

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Abstract

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An error-correcting memory system includes a storage module which receives an address during a read cycle and which reads data bits and check bits at the address, and it further includes a low DC power logic circuit which corrects errors in the data bits by decoding multiple minterms from the check bits; wherein the logic circuit is comprised of: a plurality of logic gates, one for generating each of the minterms by passing a constant power dissipating current to selectively decode the check bits; a control circuit for generating a control signal that is in one state during only a small fraction of the read cycle and is otherwise in an opposite state; and an enabling circuit, coupled between the control circuit and the logic gates, for enabling their selective decoding by permitting the constant current to flow through the gates only while the control signal is in its one state.

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Patent Owner(s)

Patent OwnerAddress
UNISYS CORPORATION801 LAKEVIEW DRIVE SUITE 100 BLUE BELL PA 19422

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Chung, Chan Stephen J San Diego, CA 1 40
Peterson, LuVerne R San Diego, CA 17 169

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