Temperature control in vacuum
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United States of America Patent
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-
Feb 9, 1988
Issued Date -
N/A
app pub date -
Jun 30, 1987
filing date -
Jul 16, 1984
priority date (Note) -
Expired
status (Latency Note)
Importance
Abstract
An apparatus 10 and a method are provided for treating silicon wafers 26 in vacuum with an ion beam B and for controlling the temperature of the wafers 26. The wafers 26 are mounted on a drum 22 which is rotated through the ion beam B, and which is large enough that the mean equilibrium temperature of the wafers 26, in the absence of any other energy sources, would be less than the desired temperature. The wafers 26 are additionally heated by infra-red lamps 34 so the desired temperature is achieved.
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