Depleted channel photoconductor
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United States of America Patent
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-
Feb 23, 1988
Grant Date -
N/A
app pub date -
Aug 18, 1986
filing date -
Aug 18, 1986
priority date (Note) -
Expired
status (Latency Note)
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Abstract
Photoconductors with channels that lie in the surface depleted region of a GaAs structure are described. These devices have nanoampere bias current, and exhibit photoconductive gain. In contrast to other photoconductors, their low frequency responsivity is of the same order as that in the GHz region, alleviating problems of equalization necessary in receiver applications. As well, these devices exhibit over 60 dB isolation as optoelectronic switches.
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