Programmable read-only memory formed with opposing PN diodes

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United States of America Patent

PATENT NO 4727409
SERIAL NO

06763063

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Abstract

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A semiconductor PROM contains a group of PROM cells (12) each consisting of a pair of opposing diodes oriented vertically with their common intermediate region (22 and 24) fully adjoining a recessed oxide insulating region (16). The PN junction (30) of the upper diode of each pair lies in non-monocrystalline semiconductor material. A composite buried layer consisting of buried regions (32) which adjoin the insulating region below the lower cell regions (20) and a buried web (44) which laterally surrounds each buried region is employed to improve programming efficiency as well as provide intermediate electrical connections.

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Patent Owner(s)

Patent OwnerAddress
SIGNETICS CORPORATIONSUNNYVALE CA

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Cline, Ronald L Los Gatos, CA 23 151
Conner, George W Ben Lomond, CA 28 560

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