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Abstract

Disclosed are pin or nip type amorphous photovoltaic elements having the i-type layer comprised of an a-SiGe: H film, which are characterized in that an i-type amorphous silicon buffer layer is disposed between the layers of p-type and i-type and thus, the mutual diffusion of impurities and/or elements added to the i-type and/or the p-type layers through the p/i boundary is effectively restricted due to the presence of the buffer layer. As a result the formation of defects at the p/i boundary and the deterioration of the p-type layer are effectively prevented, and the properties important to these kinds of devices, such as Voc, Jsc, FF being substantially improved, thereby making it possible to provide photovoltaic elements such as solar batteries having a practically acceptable long life span and a high reliability.

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First Claim