EEPROM with metal doped insulator
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United States of America Patent
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Mar 29, 1988
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N/A
app pub date -
Apr 7, 1987
filing date -
Apr 7, 1987
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Expired
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Abstract
Insulating layers responsible for the trapping of electric charge in non-volatile semiconductor memories, such as FAMOS or MNOS, are fabricated as thicker layers when doped with metals having partially filled d or f electron shells. Typically the insulating layer is silicon oxide doped with up to 10 atomic % of a first transition series metal.
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