Silicon nozzle structures and method of manufacture

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United States of America Patent

PATENT NO 4733823
SERIAL NO

06922643

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Abstract

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A nozzle structure in a crystallographically oriented, monocrystalline silicon includes a pyramidal opening anisotropically etched from the entrance side of the nozzle and truncated in a membrane having a smaller cross-section than the initial cross-section of the entrance opening. The membrane has extending therethrough a pyramidal opening etched anisotropically from the exit side. The vertical axes of both openings are substantially concentric.

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Patent Owner(s)

Patent OwnerAddress
HEWLETT-PACKARD DEVELOPMENT COMPANY L P10300 ENERGY DRIVE SPRING TX 77389

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Waggener, Herbert A Lincolnshire, IL 12 227
Zuercher, Joseph C Wilmette, IL 31 1250

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