Selective and anisotropic dry etching
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United States of America Patent
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Mar 29, 1988
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N/A
app pub date -
Mar 18, 1987
filing date -
Aug 27, 1985
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Expired
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Abstract
A composition and method for anistropically etching polysilicon or silicides with excellent selectivity to an underlying layer of an oxide or nitride of silicon is disclosed. A mixture of CClF.sub.3 or CCl.sub.2 F.sub.2 and ammonia is employed at moderate pressures in a reactive ion etching chamber.
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