Selective and anisotropic dry etching

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United States of America Patent

PATENT NO 4734157
SERIAL NO

07027458

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Abstract

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A composition and method for anistropically etching polysilicon or silicides with excellent selectivity to an underlying layer of an oxide or nitride of silicon is disclosed. A mixture of CClF.sub.3 or CCl.sub.2 F.sub.2 and ammonia is employed at moderate pressures in a reactive ion etching chamber.

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Patent Owner(s)

  • INTERNATIONAL BUSINESS MACHINES CORPORATION

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Carbaugh, Susanna R Manassas, VA 1 35
Ng, Hung Y Brooklyn, VA 16 161
Polavarapu, Murty S Manassas, VA 12 80
Stanasolovich, David Manassas, VA 72 1377

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