Sputtering cathode on the magnetron principle
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United States of America Patent
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-
Mar 29, 1988
Grant Date -
N/A
app pub date -
Aug 15, 1986
filing date -
Jul 17, 1986
priority date (Note) -
Expired
status (Latency Note)
Importance
Abstract
In a sputtering cathode on the magnetron principle with a target consisting of at least one piece and composed of the material to be sputtered, there is disposed in back of the target a magnet system having a plurality of magnet units of alternately different polarity. These form at least two endless magnetic tunnels of arching lines of force situated one within the other. The poles of the magnet units that face away from the target are joined together by a magnet yoke of soft-magnetic material. To solve the problem of being able to deposit coatings of uniform thickness with only one source of power per cathode, provision is made such that the strength of at least one magnetic field forming a magnetic tunnel can be varied relative to the strength of at least one additional magnetic field forming an additional magnetic tunnel.
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