Method for forming a semiconductor device with trench isolation structure
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United States of America Patent
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-
Apr 26, 1988
Issued Date -
N/A
app pub date -
Sep 11, 1987
filing date -
Jun 25, 1984
priority date (Note) -
Expired
status (Latency Note)
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Abstract
Formation of an integrated circuit device with the trench isolation process is disclosed. A plurality of circuit elements such as transistors are isolated from one another by trenches formed in field isolation regions of a semiconductor substrate. Each trench should be filled with appropriate materials to maintain the flatness of the surface of the substrate. Borophosphosilicate glass (BPSG) is employed as the material filled into each trench.
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