Semiconductor memory with segmented word lines
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United States of America Patent
Stats
-
May 24, 1988
Grant Date -
N/A
app pub date -
Jun 28, 1984
filing date -
Jun 29, 1983
priority date (Note) -
Expired
status (Latency Note)
Importance
Abstract
A semiconductor memory device including at least word lines and bit lines with memory cells located at each cross point therebetween. Each of the word lines is divided to form segmented word lines and each of the word line segments is driven by an individual private word driver. The individual private word drivers are activated together in response to a word selection signal. Level shifting diodes are employed in the bit line drivers to offset a voltage level change caused by the segment word drivers.
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