Deposition and planarizing methods and apparatus
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United States of America Patent
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-
Jul 12, 1988
Grant Date -
N/A
app pub date -
Dec 4, 1986
filing date -
Dec 4, 1986
priority date (Note) -
Expired
status (Latency Note)
Importance
Abstract
A layer of a substance such as an aluminum alloy is deposited, preferably by sputtering, onto a surface of a substrate such as a semiconductor wafer. The deposited substance is redistributed by bombarding the layer with ions. The ion bombardment may be induced by applying low frequency RF excitation at about 5 KHz -1 MHz to the substrate.
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