Method and means for optical detection of charge density modulation in a semiconductor
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United States of America Patent
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Jul 19, 1988
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N/A
app pub date -
Mar 4, 1986
filing date -
Mar 4, 1986
priority date (Note) -
Expired
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Abstract
Disclosed is a technique for probing dynamic sheet charge density variations in integrated semiconductor devices. Using a specially designed non-invasive Nomarski phase contrast interferometer a sheet charge density sensitivity of 2.6.times.10.sup.8 e/cm.sup.2 / .sqroot.Hz is extracted from experimental data for 1 mA of detected photocurrent. The charge density sensitivity makes possible .mu.V signal level detection in an active device, and with digital signals the corresponding signal/noise level is sufficiently high that multi-mega-baud data can be captured in real time.
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