Method for forming deposition film using Si compound and active species from carbon and halogen compound
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United States of America Patent
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Jul 26, 1988
Grant Date -
N/A
app pub date -
Oct 7, 1985
filing date -
Oct 8, 1984
priority date (Note) -
Expired
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Abstract
A method for forming a deposition film comprises introducing, into a film forming chamber for forming a deposition film on a substrate, a silicon compound as a material for film formation and an active species generated from a compound containing carbon and halogen and capable of chemical interaction with said silicon compound, and applying thereto at least an energy selected from optical, thermal and discharge energies to excite said silicon compound and to cause a reaction thereof, thus forming a deposition film on said substrate.
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