Process for producing a SiC semiconductor device
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United States of America Patent
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Aug 9, 1988
Grant Date -
N/A
app pub date -
Dec 19, 1984
filing date -
Dec 23, 1983
priority date (Note) -
Expired
status (Latency Note)
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Abstract
A process for producing a SiC semiconductor device comprising growing a single-crystal film of SiC on a single-crystal substrate of Si and forming the structure of semiconductor device such as diodes, transistors, etc., on said SiC single-crystal film, thereby obtaining a SiC semiconductor device on a commercial scale.
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