Semiconductor device and process for producing the same

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United States of America Patent

PATENT NO 4764804
SERIAL NO

07015019

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Abstract

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A semiconductor device having improved heat-dissipating characteristics employs a thin insulator film made of diamond, which has excellent thermal conductivity, as an insulator film which is formed on a chip immediately below a heat-dissipating bump electrode. Since the thin diamond film has excellent insulating properties and high thermal conductivity, it is possible to improve heat-dissipating characteristics of even a high-power semiconductor device such as a multichip module. In the case of, particularly, a multichip module, the insulation between a mother chip and a child chip can also be ensured by the presence of the thin diamond film.

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Patent Owner(s)

Patent OwnerAddress
HITACHI LTDTOKYO 100-8280

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Ishida, Hisashi Higashiyamato, JP 49 865
Otsuka, Kanji Higashiyamato, JP 72 2721
Sahara, Kunizo Nishitama, JP 6 570

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