Recrystallized CMOS with different crystal planes
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United States of America Patent
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-
Aug 30, 1988
Grant Date -
N/A
app pub date -
Sep 11, 1985
filing date -
Sep 14, 1984
priority date (Note) -
Expired
status (Latency Note)
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Abstract
A CMOS IC is formed on a semiconductor crystalline surface having a plane azimuth (110) or (023), or of a plane azimuth close thereto (plane azimuth substantially in parallel with the above-mentioned planes), in order to increase the speed of operation. At low temperatures, dependency of the carrier mobility upon the plane azimuth becomes more conspicuous as shown in FIG. 1, and the difference of mobility is amplified depending upon the planes. Therefore, employment of the above-mentioned crystalline planes helps produce a great effect when the CMOS device is to be operated at low temperature (e.g., 100.degree. K. or lower), and helps operate the device at high speeds.
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