Importance

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Abstract

When using an image sensor (1) having at least a three-layer structure of semiconductor material of, for example, n-p-n conductivity type, in which an n-substrate (2) accommodates strip-shaped regions (3, 4) of alternately higher doped p-type and still higher doped n-type on a substrate side, and in which substrate the p-regions (3) extend to below the n-regions (4) and in which an electrode system (61-64) directed at right angles to the strip-shaped regions (3, 4) is present, an electronic shutter (2-6, SP) can be realized by using a shutter signal (CP1-4, SP) in which a shutter pulse (SP) is present during picture information integration periods so that a charge connection (2, 3, 4) for picture pick-up elements is produced. Consequently charge losses across biased, photosensitive semiconductor junctions (3, 4) and free charge packets under the electrode system (61-64) corresponding thereto can be replenished or depleted, respectively, at the shutter action.

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First Claim