Method for making static random-access memory device
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United States of America Patent
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Sep 27, 1988
Grant Date -
N/A
app pub date -
Aug 22, 1986
filing date -
Oct 25, 1985
priority date (Note) -
Expired
status (Latency Note)
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Abstract
A method of making a static random-access memory device or SRAM including a memory cell having a high-resistance load element. The load element is formed from a polysilicon film, and an impurity is introduced into at least a part of the polysilicon film for the purpose of increasing the threshold voltage of a parasitic MISFET formed using the load element as its channel region. Alternatively, the deposition of the polysilicon film is carried out at a relatively high temperature, thereby preventing any increase in the current flowing through the load element, and thus reducing the power dissipation in the SRAM.
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