Semiconductor devices employing Ti-doped Group III-V epitaxial layer

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United States of America Patent

PATENT NO 4774554
SERIAL NO

06942453

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Abstract

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High resistivity Ti-doped Group III-V-based MOCVD layers are used to constrain current to flow through the active region of a variety of devices such as CSBH and DCPBH lasers.

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Patent Owner(s)

  • AMERICAN TELEPHONE AND TELEGRAPH COMPANY;BELL TELEPHONE LABORATORIES, INCORPORATED

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Dentai, Andrew G Atlantic Highlands, NJ 18 242
Joyner, Jr Charles H Middletown, NJ 4 72

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