Power hemt structure
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United States of America Patent
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-
Sep 27, 1988
Grant Date -
N/A
app pub date -
Aug 7, 1987
filing date -
Aug 7, 1987
priority date (Note) -
Expired
status (Latency Note)
Importance
Abstract
A modulation-doped field effect transistor comprises a gate recess through a top insulating layer, having a cross-section in a semiconductor layer increasing down to an interface with a further semiconductor layer and thereafter having a cross-section in the further semiconductor layer decreasing down to the bottom of the recess in the further semiconductor layer. A gate electrode is formed in the recess.
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