US Patent No: 4,778,560

Number of patents in Portfolio can not be more than 2000

Method for production of thin film transistor array substrates

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Abstract

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A method of production of active matrix display substrates using thin film transistors and more particularly to a method for production of substrates for liquid-crystal display use. The active matrix substrate using the thin film transistor is produced by the mask processes of smaller number. The process of the present invention can reduce the number of the masks, by one, of the active matrix substrate using the inverted staggered thin film transistor which requires the masks from five levels to six levels. Further improvements reduce the number of the masks to four levels from three levels, thus contributing greatly towards lower cost, improved yield.

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Patent Owner(s)

Patent OwnerAddressTotal Patents
MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD.OSAKA26247

International Classification(s)

Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Kawaguchi, Takao Osaka, JP 6 142
Nagata, Seiichi Yohkaichi, JP 26 506
Nanno, Yutaka Kobe, JP 20 350
Okawa, Noriko Osaka, JP 1 76
Takeda, Etsuya Suita, JP 11 330

Cited Art Landscape

Patent Info (Count) # Cites Year
 
HOSIDEN AND PHILIPS DISPLAY CORPORATION (1)
4,654,117 Method of fabricating a thin film transistor array 37 1986
 
Seiko Instruments & Electronics Ltd. (1)
4,624,737 Process for producing thin-film transistor 98 1985
 
SHARP KABUSHIKI KAISHA (1)
4,514,253 Manufacture of thin film transistor 32 1983

Patent Citation Ranking

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Patent Info (Count) # Cites Year
 
HITACHI, LTD. (13)
4,955,697 Liquid crystal display device and method of driving the same 70 1988
5,032,536 Method for manufacturing a liquid crystal display device with thin-film-transistors 29 1989
5,032,531 Method of manufacturing active matrix panel 75 1989
5,331,447 TFT active matrix liquid crystal display devices with plural TFTs in parallel per pixel 37 1992
5,528,396 TFT active matrix liquid crystal display devices with a holding capacitance between the pixel electrode and a scanning signal line 31 1994
5,708,484 TFT active matrix liquid crystal display devices with two layer gate lines, the first being the same level and material as gate electrodes 24 1996
5,838,399 TFT active matrix liquid crystal display devices with two layer gate lines, the first being the same level as gate electrodes. 17 1997
6,184,963 TFT active matrix LCD devices employing two superposed conductive films having different dimensions for the scanning signal lines 5 1998
6,384,879 Liquid crystal display device including thin film transistors having gate electrodes completely covering the semiconductor 5 2000
6,839,098 TFT active matrix liquid crystal display devices 6 2002
6,992,744 TFT active matrix liquid crystal display devices 5 2004
7,196,762 TFT active matrix liquid crystal display devices 5 2005
7,450,210 TFT active matrix liquid crystal display devices 1 2006
 
LG DISPLAY CO., LTD. (12)
6,559,920 Liquid crystal display device and method of manufacturing the same 8 2000
6,818,923 Thin film transistor array substrate and manufacturing method thereof 16 2002
6,862,051 Liquid crystal display device and method of manufacturing the same 4 2003
7,022,557 Thin film transistor array substrate and manufacturing method thereof 4 2004
7,468,527 Liquid crystal display device and fabricating method thereof 3 2005
7,760,309 Transflective liquid crystal display device and fabricating method thereof 1 2005
8,018,545 Method of fabricating a liquid crystal display device 0 2005
7,932,979 Method for fabricating a liquid crystal display device wherein the storage electrode is simultaneously formed with the active pattern 0 2005
7,649,582 Array substrate for a liquid crystal display device having multi-layered metal line and fabricating method thereof 3 2007
8,017,462 Method of making a liquid crystal display device capable of increasing capacitance of storage capacitor 0 2008
7,995,154 Array substrate for a liquid crystal display device having multi-layered metal line and fabricating method thereof 0 2009
8,072,565 Transflective liquid crystal display device 1 2010
 
SHARP KABUSHIKI KAISHA (10)
4,918,494 Thin film transistor 6 1989
5,054,887 Active matrix type liquid crystal display 95 1989
5,159,477 Active matrix display device having additional capacitors connected to switching elements and additional capacitor common line 39 1990
5,231,039 Method of fabricating a liquid crystal display device 58 1991
5,212,574 Active matrix board having double-layer scan lines and capacity lines with discontinuous lower scan lines and lower capacity lines 35 1992
5,728,592 Method for fabricating a thin film transistor matrix device 17 1995
5,879,973 Method for fabricating thin-film transistor 15 1995
5,953,583 Manufacturing method of a thin-film transistor 10 1997
5,994,173 Thin film transistor matrix device and method for fabricating the same 8 1997
6,338,990 Method for fabricating thin-film transistor 14 1998
 
SAMSUNG DISPLAY CO., LTD. (5)
5,478,766 Process for formation of thin film transistor liquid crystal display 110 1995
6,008,065 Method for manufacturing a liquid crystal display 102 1996
6,331,443 Method for manufacturing a liquid crystal display 13 1999
6,661,026 Thin film transistor substrate 4 2002
RE41363 Thin film transistor substrate 2 2005
 
SEMICONDUCTOR ENERGY LABORATORY CO., LTD. (5)
7,416,907 Semiconductor device and method for forming the same 2 2004
7,329,906 Semiconductor device and method for forming the same 2 2004
7,423,290 Electro-optical device and driving method for the same 6 2006
8,026,886 Electro-optical device and driving method for the same 0 2008
8,106,867 Electro-optical device and driving method for the same 0 2008
 
SEIKO PRECISION INC. (4)
5,034,340 Amorphous silicon thin film transistor array substrate and method for producing the same 23 1989
5,065,202 Amorphous silicon thin film transistor array substrate and method for producing the same 8 1990
5,121,177 Silicon thin film transistor 1 1990
5,121,178 Silicon thin film transistor 0 1990
 
FUJI XEROX CO., LTD. (3)
5,366,912 Fabrication method of thin-film transistor 29 1989
5,075,244 Method of manufacturing image sensors 32 1990
5,320,973 Method of fabricating a thin-film transistor and wiring matrix device 24 1993
 
North American Philips Corporation (3)
5,305,128 Active matrix electro-optic display device with storage capacitors and projection color apparatus employing same 17 1993
5,929,463 Active matrix electro-optic display device with storage capacitors and projection color apparatus employing same 5 1994
6,235,546 Method of forming an active matrix electro-optic display device with storage capacitors 0 1994
 
PANASONIC LIQUID CRYSTAL DISPLAY CO., LTD. (3)
5,610,738 Method for making LCD device in which gate insulator of TFT is formed after the pixel electrode but before the video signal line 23 1995
5,532,850 TFT active matrix liquid crystal display with gate lines having two layers, the gate electrode connected to the wider layer only 33 1995
5,671,027 LCD device with TFTs in which pixel electrodes are formed in the same plane as the gate electrodes with anodized oxide films and before the deposition of the silicon gate insulator 29 1995
 
AU OPTRONICS CORP. (2)
7,098,091 Method for fabricating thin film transistors 1 2004
8,110,452 Liquid crystal display device and manufacturing method thereof 0 2007
 
CANON KABUSHIKI KAISHA (2)
6,208,400 Electrode plate having metal electrodes of aluminum or nickel and copper or silver disposed thereon 9 1997
6,184,964 Electrode plate with two-layer metal electrodes including copper or silver layer, and flattened anti-oxidation and insulating layers 4 1999
 
GENERAL ELECTRIC COMPANY (2)
5,132,745 Thin film transistor having an improved gate structure and gate coverage by the gate dielectric 25 1991
5,362,660 Method of making a thin film transistor structure with improved source/drain contacts 65 1992
 
GETNER FOUNDATION LLC (2)
6,514,804 Thin-film transistor and fabrication method thereof 6 2000
6,890,783 Active matrix substrate plate and manufacturing method therefor 9 2002
 
MITSUBISHI ELECTRIC CORPORATION (2)
7,084,017 Liquid crystal display 9 2004
7,755,088 Liquid crystal display 7 2008
 
TOPPOLY OPTOELECTRONICS CORP. (2)
5,075,237 Process of making a high photosensitive depletion-gate thin film transistor 23 1990
5,196,911 High photosensitive depletion-gate thin film transistor 9 1991
 
FAHRENHEIT THERMOSCOPE LLC (1)
5,238,861 Method for manufacturing an active matrix display screen with storage capacitors 41 1991
 
MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. (1)
5,270,229 Thin film semiconductor device and process for producing thereof 34 1992
 
NEC CORPORATION (1)
5,182,661 Thin film field effect transistor array for use in active matrix liquid crystal display 74 1991
 
SEIKO EPSON CORPORATION (1)
5,175,114 Method for production of a bidirectional nonlinear resistor, active matrix liquid crystal panel using bidirectional nonlinear resistor 4 1990
 
SEIKO INSTRUMENTS INC. (1)
5,637,187 Light valve device making 81 1995
 
U.S. Philips Corporation (1)
5,236,573 MIM devices, their method of fabrication and display devices incorporating such devices 13 1990