Materials and methods for etching tungsten polycides using silicide as a mask
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United States of America Patent
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Oct 18, 1988
Grant Date -
N/A
app pub date -
Mar 26, 1987
filing date -
Mar 26, 1987
priority date (Note) -
Expired
status (Latency Note)
Importance
Abstract
A polycide etch process using a SiCl.sub.4 :HCl reactive gas flow rate ratio of at least about 1:1 for etching the polysilicon without etching, notching or degrading the overlying silicide. Thus, after patterning the silicide using a photoresist mask, the silicide can be used as the mask for etching the polysilicon, thereby providing precise pattern transfer to the polysilicon, independent of photoresist degradation. Also, a thinner, more precisely patterned photoresist mask can be used.
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