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Abstract

A method of manufacturing a thin film transistor comprises the steps of forming a gate electrode on one surface of a transparent substrate, forming on the substrate an insulating layer and a semiconductor layer in the named order to cover the gate electrode, and depositing a positive photoresist layer on the semiconductor layer. Thereafter, the photoresist layer is exposed by irradiating from the other surface of the substrate so as to use the gate electrode as a mask. Therefore, if the positive photoresist layer is developed, the unexposed portion remains on the semiconductor layer to correspond to the gate electrode. Then, the semiconductor layer is etched using the remaining photoresist as a mask so as to form a semiconductor island on the insulating layer, and source and drain electrodes are formed on the semiconductor island.

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First Claim