Multilayer interconnection for integrated circuit structure having two or more conductive metal layers
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United States of America Patent
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Nov 1, 1988
Grant Date -
N/A
app pub date -
Jan 22, 1987
filing date -
Jan 22, 1987
priority date (Note) -
Expired
status (Latency Note)
Importance
Abstract
Construction of a novel multilayer conductive interconnection for an integrated circuit having more than one conductive layer is disclosed comprising a lower barrier layer which may be in contact with an underlying silicon substrate and comprising a material selected from the class consisting of TiW and TiN; an intermediate layer of conductive metal such as an aluminum base metal; and an upper barrier layer which may be in contact with a second aluminum base metal layer and which is selected from the class consisting of TiW, TiN, MoSi.sub.x and TaSi where x equals 2 or more.
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