Semiconductor contact silicide/nitride process with control for silicide thickness
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United States of America Patent
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Nov 15, 1988
Grant Date -
N/A
app pub date -
Aug 24, 1987
filing date -
Aug 24, 1987
priority date (Note) -
Expired
status (Latency Note)
Importance
Abstract
A titanium silicide/titanium nitride process is disclosed wherein the thickness of the titanium nitride can be regulated with respect to the titanium silicide. In particular, a control layer is formed in the contact opening during a reactive cycle to form a relatively thin (20 to 50 angstrom) control layer. Titanium is thereafter deposited and in another thermal reaction the control layer retards the development of titanium silicide without retarding the development of titanium nitride so that the thickness of titanium silicide is kept small. A double titanium process can also be used.
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