Method for manufacturing a semiconductor device free from current leakage through a semiconductor layer

United States of America Patent

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Nov 22, 1988
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N/A
app pub date
Sep 4, 1987
filing date
Aug 24, 1985

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Expired

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Abstract

An improved semiconductor device is disclosed which is free from current leakage due to pin-holes or other gaps. Also an improved method for processsing a semiconductor device is shown. According to the invention, gaps produced in fabricating process of the semiconductor layer are filled with insulator in advance of deposition of electrodes.

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Patent Owner(s)

Patent Owner	Address
SEMICONDUCTOR ENERGY LABORATORY CO LTD	398 HASE ATSUGI-SHI KANAGAWA-KEN 243-0036

International Classification(s)

H01L:SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICE....

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[Patents Count]

Inventor(s)

Inventor Name	Address	# of filed Patents	Total Citations
Abe, Masayoshi	Tama, JP	93	1671
Fukada, Takeshi	Ebina, JP	70	3055
Kinka, Mikio	Atsugi, JP	15	593
Kobayashi, Ippei	Atsugi, JP	34	1305
Koyanagi, Kaoru	Saku, JP	19	903
Nagayama, Susumu	Setagaya, JP	24	819
Shibata, Katsuhiko	Atsugi, JP	26	1215
Susukida, Masato	Atsugi, JP	24	649
Suzuki, Kunio	Atsugi, JP	74	1536
Yamazaki, Shumpei	Setagaya, JP	35	380

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Method for manufacturing a semiconductor device free from current leakage through a semiconductor layer

Number of patents in Portfolio can not be more than 2000

United States of America Patent

07092943

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PATENT NO	4786607
SERIAL NO	07092943
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