Method for selective surface treatment of semiconductor structures
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United States of America Patent
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Dec 6, 1988
Issued Date -
N/A
app pub date -
Jul 20, 1987
filing date -
Jul 20, 1987
priority date (Note) -
Expired
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Abstract
Surface features of a semiconductor structure above a predetermined level are exposed for selective treatment (e.g., etching) by forming a layer of a solvent-expanded polymer on the surface of the structure, and allowing the layer to dry and cure, thereby relaxing to the predetermined level, at which it protects the underlying structure during treatment. Subsequently, the protective layer is removed by rinsing in a solvent.
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