Redundancy circuit for use in a semiconductor memory device

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United States of America Patent

PATENT NO 4794568
SERIAL NO

07044702

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Abstract

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A normal decoder and a redundant decoder having address program devices are used for the replacement of bad cells. The number of address program devices is one more than the number of input address bits for selecting a normal row or column. The input signals of the additional program device are complementary to the input signals of one of the other program devices. The program of the program devices have two steps to repair the faulty cells. To increase the reliability of redundancy, a nonvolatile memory element used in the program devices is a bridge connected four cell FLOTOX type nonvolatile memory device.

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Patent Owner(s)

  • SAMSUNG SEMICONDUCTOR & TELECOMMUNICATION CO., LTD.

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Do, Jae-Yeong Dongjak, KR 3 68
Lim, Hyung-Kyu Suwon, KR 15 410
Mehta, Rustam Sunnyvale, CA 4 222

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