Plasma treating method and apparatus therefor

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United States of America Patent

PATENT NO 4795529
SERIAL NO

07109318

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ATTORNEY / AGENT: (SPONSORED)

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Abstract

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This invention relates to a plasma treating method and apparatus therefor. The plasma treating method comprises rendering a gas having a critical potential plasmic under a reduced pressure and changing an acceleration voltage for accelerating ions in the plasma towards a sample interposing the critical potential. The plasma treating apparatus comprises means for rendering a gas having a critical potential plasmic under a reduced pressure and means for changing an acceleration voltage for accelerating ions in the plasma towards a sample interposing the critical potential. According to the present invention, the etching step and the film formation step can be carried out alternately and the plasma treating time can be shortened.

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Patent Owner(s)

  • HITACHI, LTD.

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Hirobe, Kado Koganei, JP 2 139
Kakehi, Yutaka Hikari, JP 41 1012
Kawahara, Hironobu Kudamatsu, JP 44 901
Kawasaki, Yoshinao Yamaguchi, JP 58 994
Kudo, Katsuyoshi Kudamatsu, JP 9 257

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