Fabrication of metal interconnect for semiconductor device
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United States of America Patent
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Jan 10, 1989
Issued Date -
N/A
app pub date -
Apr 9, 1987
filing date -
Oct 5, 1984
priority date (Note) -
Expired
status (Latency Note)
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Abstract
Disclosed is a method of fabricating a semiconductor device comprising the step of defining metal interconnect features in a metal layer so that a metal feature having a size substantially larger than a predetermined feature size comprises an array of metal features. Each of the metal features in the array has a size not substantially larger than the predetermined feature size.
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