Method of dry etching aluminum
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United States of America Patent
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-
Jan 17, 1989
Grant Date -
N/A
app pub date -
Mar 28, 1988
filing date -
Mar 27, 1987
priority date (Note) -
Expired
status (Latency Note)
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Abstract
A method of reactive ion etching (RIE) of aluminum or an alloy thereof (Al) in which a substrate with an Al layer coated thereon is maintained at a temperature of 60.degree. C. or less by cooling the substrate, so that the Al layer is taperingly etched to form conductor lines having sloped sidewalls. The substrate is clamped to a cooled electrode stage by an electrostatic chuck.
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