Method for forming Cu In Se.sub.2 films
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United States of America Patent
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Jan 17, 1989
Issued Date -
N/A
app pub date -
Dec 22, 1986
filing date -
Jul 16, 1985
priority date (Note) -
Expired
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Abstract
A method for fabricating a copper indium diselenide semiconductor film comprising use of DC magnetron sputtering apparatus to sequentially deposit a first film of copper on a substrate and a second film of indium on the copper film. Thereafter the substrate with copper and indium films is heated in the presence of gas containing selenium at a temperature selected to cause interdiffusion of the elements and formation of a high quality copper indium diselenide film. In a preferred form, an insulating substrate is used and an electrical contact is first deposited thereon in the same DC magnetron sputtering apparatus prior to deposition of the copper and indium films.
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