Semiconductor random access nonvolatile memory device with restore and control circuits

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United States of America Patent

PATENT NO 4799194
SERIAL NO

07016729

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Abstract

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In a nonvolatile memory device which is integrated by combining SRAM cells and nonvolatile memory cells at a ratio of 1:1; a control circuit is provided which, at a recall time, selects all word lines and supplies a predetermined electric potential to bit lines, so that a recall is carried out simply and accurately.

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Patent Owner(s)

  • FUJITSU LIMITED

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Arakawa, Hideki Yokohama, JP 58 1438

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